SiC-MOSFETs from ROHM eliminate tail current during switching, resulting in faster operation, lower switching losses and increased stability. The lower on-state resistance and compact chip size result in reduced capacitance and gate charge. In addition, SiC has excellent material properties, such as only a minimal increase in on-state resistance, and enables greater package miniaturisation than silicon devices, where on-resistance can more than double with increasing temperature. The fourth generation of SiC-MOS from ROHM have an industry-leading low on-resistance, with improved short-circuit strength.